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| SKKT 162 H4, SKKH 162 H4 THYRISTOR BRIDGE,SCR,BRIDGE Symbol Conditions Values Units SEMIPACK(R) 2 Thyristor / Diode Modules SKKH 162 H4 SKKT 162 H4 Features Typical Applications 1) SKKT SKKH 1 23-03-2005 NOS (c) by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs. ambient temp. Fig. 2L Power dissipation per module vs. rms current Fig. 2R Power dissipation per module vs. case temp. Fig. 3L Power dissipation of two modules vs. direct current Fig. 3R Power dissipation of two modules vs. case temp. 2 23-03-2005 NOS (c) by SEMIKRON SKKT 162 H4, SKKH 162 H4 THYRISTOR BRIDGE,SCR,BRIDGE Fig. 4L Power dissipation of three modules vs. direct and rms current Fig. 4R Power dissipation of three modules vs. case temp. Fig. 5 Recovered charge vs. current decrease Fig. 6 Transient thermal impedance vs. time Fig. 7 On-state characteristics Fig. 8 Surge overload current vs. time 3 23-03-2005 NOS (c) by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 9 Gate trigger characteristics Dimensions in mm This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 23-03-2005 NOS (c) by SEMIKRON |
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